| PART |
Description |
Maker |
| 1N5296 1N5310 1N5314 1N5311 1N5295 1N5294 1N5309 1 |
CURRENT LIMITER FIELD EFFECT DIODES
|
Knox Semiconductor Inc
|
| NIMD6302R2-D |
HDPlus Dual N-Channel Self-protected Field Effect Transistors with 1:200 Current Sense FET
|
ON Semiconductor
|
| CD5290 CD5291 CD5292 CD5293 CD5294 CD5295 CD5296 C |
Current Limiter Diode
CURRENT REGULATOR CHIPS
|
MICROSEMI[Microsemi Corporation]
|
| DCR258 DCR250 DCR251 DCR252 DCR253 DCR254 DCR255 D |
Current Limiter Diode
CURRENT REGULATOR DIODES
|
MICROSEMI[Microsemi Corporation]
|
| 2SJ105 |
Field Effect Transistor Silicon P Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications
|
TOSHIBA
|
| 2SK330 |
Field Effect Transistor Silicon N Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications
|
TOSHIBA
|
| MRF6VP41KH MRF6VP41KHR7 MRF6VP41KHSR6 |
RF Power Field Effect Transistors
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
|
Freescale Semiconductor, Inc
Freescale Semiconductor, In...
|
| MV5283 |
Current Limiter Diode
|
MICROSEMI
|
| MTM12P10 MTP12P06 MTP12P10 |
POWER FIELD EFFECT TRANSISTOR 12 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
(MTP12P06 / MTP12P10) POWER FIELD EFFECT TRANSISTOR
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
|
| 2SJ626 2SJ626-T1B 2SJ626-T2B |
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:30V; Forward Voltage Max, VF:1V; Vf Test Current:5mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:150mA; Forward Current Max, If:150mA; Forward Voltage:1.0V MOS场效应管
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC, Corp.
NEC[NEC]
|
| MHIC-48100A |
Inrush Current Limiter HIC
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| HAS100-S HAS50-S HAS200-S HAS600-S HAS300-S HAS400 |
Current Transducers HAS 50 to 600-S
Current Transducers HAS 50 to 600-S MAGNETIC FIELD SENSOR-HALL EFFECT, RECTANGULAR
|
LEM[LEM]
|
